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Title

128Mb DDR SDRAM Chip

Description

Small black rectangle

Provenance

The pictured component is one of two identical chips labeled as described. It was chosen because it has easily identifiable markings and it seemed vital to the device.

Function

random access semiconductor memory

Identifier

K4H561638F-UCB3

Country of Origin

Unknown; likely Austin, Texas, or one of many factories in China or Korea

Part Number

M470L1624FU0-CB3

Date Code

428

Date Created

July 2004

Manufacturer

Samsung

Raw Materials

Alloy 42 (42% Nickel, 58% Iron), an epoxy molding compound, and polysilicon

Evidence

It was difficult to find information on this component. Unlike many of the other chips, this one was not labeled with a country of origin. I was able to find a datasheet for it after a few searches on alldatasheet.com and listings of certain online retailers selling it, but was unable to find concrete information beyond that. Samsung's semiconductor division has manufacturing locations in Austin, Texas, Korea, and throughout China, but I couldn't find any indication as to which specific factory or even country the DRAM chip would've been made in. I know it was manufactured in July 2004 because of the date code, 428, and datamath.org. As information was limited, to find out what it was made of, I looked at a similar SDRAM device, the KM44S16030CT-GL. A research report which used the device broke down what it was made of, which I believe is likely to be similar to what the K4H561638F-UC is made of. I also looked at a report on the K4H560838C-TCA2 SDRAM chip, which says it contains two polysilicon layers and two metal layers.

Sources

K4H561638F-UC Datasheet

Samsung Electronics Annual Report 2005

http://www.datamath.org/Datecodes.htm

SDRAM Space Radiation Effects Measurements and Analysis

Samsung K4H560838C-TCA2 256M DDR SDRAM Partial Circuit Analysis Report

Curator

Maddie